These modules use unique ATP testing and technologies to enable support for industrial temperature operating ranges from -40°C to 85°C but at lower price points than modules with native industrial grade ICs.

ATP DRAM modules and NAND flash storage products offer an anti-sulfur resistor option to prevent the corrosive effects of sulfur contamination, guaranteeing continued dependable performance for a long time.

Protects electronic circuits with a coating of the chemical compound Parylene to resist dust, chemical contaminants, extreme temperature, moisture and corrosion.

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Chamfering refers to the process of “beveling or tapering” the connector edges for easier insertion into the memory slots. The bevel is done at specific angles,
typically at around 40° to 50°.

30µ”-thick gold plating of the DRAM contact optimizes signal transmission quality between the connector and DRAM modules.

For NAND flash storage products, the entire drive, including firmware, user and spare areas, is thoroughly tested to ensure that there are no bad blocks. DRAM products also undergo complete testing, covering PHY and controller, including meta/mapping and data caching areas.

TDBI involves subjecting ATP DRAM modules to various temperatures, power cycling, voltages and other stress conditions within a certain period. It aims to cause weak ICs to fail so they can be screened out, thus making sure that the modules contain only the most robust ICs.

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