Its compact form factor and ultra-fast performance are among the key reasons why the M.2 2280 NVMe solid state module is gaining increasing adoption in embedded and industrial applications. Supporting the NVMe™protocol on the high-speed PCI Express® (PCIe®) Gen3 x4 interface, these modules deliver up to 2,700/1,500 MB/s sequential read/write and extra-long service life of up to 10,600 TB.*
When installed in enclosures with little or no airflow and constantly subjected to intense workloads under harsh conditions, these modules face overheating challenges. Multiple die stacking per integrated circuit (IC) and intensive components in the limited printed circuit board (PCB) space, especially for double-sided designs, also contribute to the overheating issue.
ATP M.2 2280 NVMe modules adopt a Customizable Thermal Management Solution. This includes firmware and hardware options, such as copper foil and fin-type heatsink, to effectively dissipate heat and ensure optimal levels of sustained performance.
With a maximum density of 3.84 TB, these high-capacity modules offer huge storage space to accommodate vast amounts of data and handle simultaneous queues of storage requests from multiple servers. ATP NVMe SSDs outperform Serial ATA 6 Gb/s SSDs with 4-6X faster access and over 3X lower latency, making them ideal for applications where microseconds count, such as those involving real-time customer interactions, time-critical data analytics, and more.
* Terabytes Written (TBW). Under highest Sequential write value. May vary by density, configuration and applications.
仕様最新のアップデート: 2022-08-15 15:37
|High-Capacity M.2 NVMe|
|Interface||PCIe G3 x4||PCIe G3 x4|
|Form Factor||M.2 2280-D2-M||M.2 2280-D2-M|
|Operating Temperature (Tcase)1||-40°C to 85°C||0°C to 70°C|
|Power Loss Protection Options||Firmware Based||Firmware Based|
|Optional SED Features||-||-|
|Capacity||3.84 TB||3.84 TB|
|Sequential Read (MB/s) up to||2,200||2,700|
|Sequential Write (MB/s) up to||1,250||1,500|
|Random Reads IOPS (4K, QD128) up to||195,000||195,000|
|Random Writes IOPS (4K, QD128) up to||170,000||170,000|
|Endurance (TBW)2 up to||10,600 TB||10,600 TB|
|Reliability MTBF @ 25°C||>2,000,000 hours||>2,000,000 hours|
|Dimensions: L x W x H (mm)||80.0 x 22.0 x 3.5 (M.2 2280 Bare PCBA); 80.0 x 24.4 x 12.5 (M.2 2280 with 8 mm heatsink)||80.0 x 22.0 x 3.5 (M.2 2280 Bare PCBA); 80.0 x 24.4 x 12.5 (M.2 2280 with 8mm heatsink)|
|Certifications||RoHS, VCCI, CE, FCC||RoHS, VCCI, CE, FCC|
|Warranty||2 years||2 years|
1 Case Temperature, the composite temperature as indicated by SMART temperature attributes.
2 Under highest Sequential write value. May vary by density, configuration and applications.
3 Data subject to change.
|テクノロジー ＆ 追加サービス||製品ラインナップ|
Hardware-based Power Loss Protection
Advanced Wear Leveling
Dynamic Data Refresh
End-to End Data Protection
TCG Opal 2.0
Dynamic Thermal Throttling
- ATP High-Capacity M.2 NVMe product flyer