Solutions to Unique Challenges
Growing demand for higher computing network appliances at the edge, such as RU and DU for scaling virtualization deployment, is driven on by the Open Radio Network structure in the 5G era. Telco/ISPs are struggling to provide higher SPEC DRAM/NAND storage at the edge due to a lack of chassis space, fluctuating temperatures, and environmental erosions.
With its expertise in co-design and validation, ATP meets the demand for hardware and software design that must adhere to stringent service level commitments.
Unique Challenges
Solutions
Nowadays, the heart of virtually all industries is networking and cybersecurity, encompassing a variety of network-related appliances. Together, ATP builds solutions that drive toward greater computing that upscales software defined solutions for providers across the board, including gateway, UTM, NGFW, managed switch, and all sorts of servers.
Today, over 70% of companies listed on Gartner’s Magic Quadrant report for Primary Storage, Data Center and Cloud Computing, and WAN-Edge Infrastructure consider ATP as a strategic supplier.
Unique Challenges
Solutions
While experiencing exponential expansion, storage server and cloud service providers also confront difficulties with data integrity, reliability, and other factors that are crucial to perpetual up-time. Boot drives, server DRAM, and other uncommon embedded form factors are areas of expertise for ATP.
Today, ATP is regarded as a strategic supplier by more than 70% of the businesses included in Gartner's Magic Quadrant reports for Primary Storage, Data Center and Cloud Computing, and WAN-Edge Infrastructure.
Unique Challenges
Solutions
From Whitebox uCPE makers to turnkey solution providers, the SD-WAN industry has struggled to strike a balance between ideal OPEX and practical CAPEX. An achievable OPEX within the service level agreement is ensured by a better endurance DRAM/NAND at a reasonable cost.
Today, leading SD-WAN solution providers consider ATP as a strategic supplier, we’d like to show you why
Unique Challenges
Solutions
Featured Technologies
End-to End Data Path Protection
Ensures error checking and correction as data moves from the host to the storage device controller and vice versa. By covering the entire data path, end-to-end protection guarantees integrity at any point during data transfer.
Industrial Temperature
Operational stability in extreme temperatures from -40°C to 85°C.
Hardware-Based In-Flight-Data Power Loss Protection
This hardware-based power failure protection prevents data loss during a power loss event by ensuring that the last read/write/erase command is completed and data is stored safely in non-volatile flash memory. Select NVMe modules and SATA SSDs feature a new microcontroller unit (MCU)-based design that allows the PLP array to perform intelligently in various temperatures, power glitches and charge states to protect both device and data.
Firmware-Based Data-At-Rest Power Loss Protection
The firmware-based power failure protection effectively protects data written to the device prior to power loss. After the host receives a signal from the device that the WRITE operation has been successfully completed, newly written as well as previously written data are protected even if a sudden power loss occurs.
Wide Temp DRAM Modules
These modules use unique ATP testing and technologies to enable support for industrial temperature operating ranges from -40°C to 85°C but at lower price points than modules with native industrial grade ICs.
Test During Burn-In (TDBI)
TDBI involves subjecting ATP DRAM modules to various temperatures, power cycling, voltages and other stress conditions within a certain period. It aims to cause weak ICs to fail so they can be screened out, thus making sure that the modules contain only the most robust ICs.
Anti-Sulfur Resistors
ATP DRAM modules and NAND flash storage products offer an anti-sulfur resistor option to prevent the corrosive effects of sulfur contamination, guaranteeing continued dependable performance for a long time.
Conformal Coating
Protects electronic circuits with a coating of the chemical compound Parylene to resist dust, chemical contaminants, extreme temperature, moisture and corrosion.
SecurEncrypt
AES-256 encryption for the User Data area.
TCG Opal
Plus other features defined for data storage devices by the Trusted Computing Group.
Recommended Products
Specifications
View productIndustrial Enterprise PCIe® Gen4 NVMe SSDs | |||
---|---|---|---|
Naming | N651Sie | N651Sie | N651Sie |
Interface | PCIe G4 x4 | PCIe G4 x4 | PCIe G4 x4 |
Form Factor | M.2 | U.2 | E1.S |
Dimensions (mm) | 80 x 22 x 3.85 | 100 x 69.85 x 15 | 118.75 x 33.75 x 9.5 |
Flash Type | TLC | TLC | TLC |
Capacity | 120 GB to 1.92 TB | 480 GB to 7.68 TB | 480 GB to 7.68 TB |
Sequential Read (MB/s) up to 1,6,7 | 6,450 | 6,000 | 6,100 |
Sequential Write (MB/s) up to 1,6,7 | 6,050 | 5,500 | 6,000 |
Random Read KIOPS up to 2,6,7 | 1,100 | 820 | 870 |
Random Write KIOPS up to 2,6,7 | 1,250 | 1,200 | 1,200 |
Sustained Sequential Write (MB/s) up to 3,6,7 | 3,000 | 3,200 | 3,200 |
Sustained Random Write up to 4,6,7 | 250 KIOPS (1,000 MB/s) | 320 KIOPS (1,280 MB/s) | 320 KIOPS (1,280 MB/s) |
Endurance [DWPD] 8 | Available in 1, 2, and 5 DWPD configurations | Available in 1, 2, and 5 DWPD configurations | Available in 1, 2, and 5 DWPD configurations |
QoS 99.9999% 5,6,7 | Read <90µs | Write <10µs | Read <80µs | Write <10µs | Read <80µs | Write <10µs |
Data Retention | 1 year at 55°C (100% P/E cycles) | 1 year at 55°C (100% P/E cycles) | 1 year at 55°C (100% P/E cycles) |
Power Loss Protection | Yes | Yes | Yes |
End to End Data Path Protection | Yes | Yes | Yes |
Sustained Read Power (Max) 7 | <9W | <14.5W | <13W |
Sustained Write Power (Max) 7 | <11.5W | <17.5W | <15.5W |
Supply Voltage | 3.3V | 12V | 12V |
Operating Temperature Tc | -40°C to 85°C (I-Temp) | -40°C to 85°C (I-Temp) | -40°C to 85°C (I-Temp) |
Storage Temperature Tc | -40°C to 85°C | -40°C to 85°C | -40°C to 85°C |
Vibration | Sine 16.4G,10~2,000Hz | Sine 16.4G,10~2,000Hz | Sine 16.4G,10~2,000Hz |
Shock | Half sine 1,500G/0.5ms | Half sine 1,500G/0.5ms | Half sine 1,500G/0.5ms |
Reliability MTBF @ 25°C | >3,000,000 hours | >3,000,000 hours | >3,000,000 hours |
UBER | <1 sector per 10^17 bits read | <1 sector per 10^17 bits read | <1 sector per 10^17 bits read |
Warranty | 5 years | 5 years | 5 years |
1. Sequential Burst Performance tested with IOmeter 4MB, QD64
2. Random Burst Performance tested with IOmeter 4KB, QD64
3. Average Sustained Sequential Write Performance tested with IOmeter, 4MB, QD64 for 4 hours
4. Average Sustained Random Write Performance tested with IOmeter, 4KB, QD64 for 4 hours
5. 4KB Random QD=1
6. Actual performance may vary depending on user conditions and system environment
7. Parameters tested with highest capacity drive
8. DWPD for 5 years tested with JESD219A Enterprise workload
Download Attachment
- ATP_ERS_product_flyer_v2
- ATP M.2 SATA product flyer
- ATP mSATA product flyer
- ATP 2.5 SSD product flyer
- ATP CFast card product flyer
- ATP M.2 NVMe product flyer
- ATP NVMe HSBGA product flyer
- ATP DDR3 product flyer
- ATP DDR4 product flyer